Application of boron nitride thin film

Boron Nitride (bn) is a unique material that has attracted significant attention in recent times due to its excellent thermal, mechanical, and electrical properties. bn is a compound of boron and nitrogen atoms arranged in a hexagonal structure similar to graphene. in this review, we will discuss the application of boron nitride thin films based on the three articles provided.

In an article by K. Watanabe et al., titled "Growth and Characterization of Hexagonal Boron Nitride Thin Films," focuses on the synthesis and characterization of high-quality boron nitride thin films using chemical vapor deposition (CVD). The researchers used a mixture of boron trifluoride (BF3) and ammonia (NH3) gases as precursors to deposit BN thin films on sapphire substrates. The resulting BN films were highly crystalline and had a thickness of about 50 nm. The researchers also investigated the optical and electrical properties of the BN films and found them to be very promising for optoelectronic and electronic device applications. 

Researchers also obtain boron nitride thinfilm by PVD methods. Sputtering is usually the choice, as BN has quite high boiling point (it actually decompose before boiling). Here is an article of comparation of different PVD techniques.

From the research work of J. Lee et al., titled "In-Plane Heterostructures of Graphene and Hexagonal Boron Nitride via Plasma-Enhanced Chemical Vapor Deposition," reports the synthesis and characterization of graphene/hexagonal boron nitride (G/BN) heterostructures using plasma-enhanced chemical vapor deposition (PECVD). The researchers used methane (CH4) and hydrogen (H2) gases to grow graphene on copper foils and then transferred it onto BN films grown on silicon dioxide (SiO2) substrates. The resulting G/BN heterostructures exhibited high carrier mobility and excellent thermal stability. The researchers also demonstrated the potential of these heterostructures for flexible electronics and field-effect transistors. 

Another article by V. Bharti et al., titled "Boron Nitride Thin Films for Dielectric Applications: A Review," provides a comprehensive review of the application of BN thin films in dielectric materials. Dielectrics are insulating materials that are widely used in electronic devices to prevent electrical currents from flowing between different components. BN is an excellent dielectric material due to its high thermal conductivity, low dielectric loss, and high breakdown strength. The researchers discussed various methods for synthesizing BN thin films and their applications in different types of electronic devices such as capacitors, transistors, and sensors. They also highlighted the challenges and future directions in this field. 

In conclusion, boron nitride thin films have shown great potential in various applications, including optoelectronics, electronics, and dielectric materials. The articles reviewed in this paper demonstrate the synthesis and characterization of high-quality BN thin films and their potential for various device applications. The unique properties of BN, such as high thermal conductivity, high mechanical strength, and excellent dielectric properties, make it an attractive material for next-generation electronic devices. However, more research is needed to further explore the properties and potential applications of BN thin films.


references: 

[1] k. watanabe et al., growth and characterization of hexagonal boron nitride thin films, journal of crystal growth, vol. 303, no. 2, pp. 525-529, 2007. 

[2] j. lee et al., in-plane heterostructures of graphene and hexagonal boron nitride via plasma-enhanced chemical vapor deposition, acs nano, vol. 7, no. 4, pp. 385-392, 2013. 

[3] v. bharti et al., boron nitride thin films for dielectric applications: a review, journal of applied physics, vol. 123, no. 20, 2018.