A quick introduction: how to synthesize BN thin film

Boron nitride (bn) thin films have gained significant research interest due to their unique properties and potential applications in electronic devices. the article titled "boron nitride thin films for dielectric applications: a review" by v. bharti et al. published in the journal of applied physics in 2018 provides a comprehensive review of various synthesis methods for bn thin films.

BN possesses excellent thermal stability, high electrical resistivity, good chemical inertness, and low dielectric constant, which makes it an ideal candidate for electronic applications such as insulation layers, gate dielectrics, and encapsulation layers. the most commonly used synthesis techniques for bn films include physical vapor deposition (pvd) and chemical vapor deposition (cvd).

The pvd method includes processes such as sputtering, electron-beam evaporation, and pulsed laser deposition. among these techniques, sputtering is the most widely used and relatively simple technique to synthesize bn films. in the sputtering process, a target material of boron or boron nitride is bombarded by positively charged ions in a vacuum environment, resulting in the ejection of atoms that deposit on a substrate, forming a thin film.

The cvd method involves the reaction of gaseous precursors on a heated substrate surface to form a solid deposit. several precursor gases such as ammonia (nh3), borane (bh3), and nitrogen (n2) can be used in the cvd process to produce bn films. however, this technique requires a high-temperature environment and a specialized setup, making it more complex than the pvd method.

Another synthesis method discussed in the article is the sol-gel method, where a solution containing boron and nitrogen precursors is spun-coated onto a substrate and then annealed at high temperatures to form a bn film. the sol-gel method offers advantages such as low cost, simplicity, and high homogeneity of the films, making it a promising technique for bn thin-film synthesis.

In conclusion, the review article by v. bharti et al. provides an excellent overview of various synthesis methods for bn thin films. researchers can choose the appropriate method based on their specific requirements such as film quality, thickness, crystallinity, and cost-effectiveness. with continued advancements in synthesis techniques, bn thin films are expected to become increasingly popular in electronic applications due to their unique properties and potential for high-performance devices.


references: [1] v. bharti et al., boron nitride thin films for dielectric applications: a review, journal of applied physics, vol. 123, no. 20, 2018.